2013
C. Banzhaf, M. Grieb, A. Trautmann, A. Bauer, L. Frey, Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures, Materials Science Forum. 740–742 (2013) 691–694. https://doi.org/10.4028/www.scientific.net/MSF.740-742.691.
2011
L. Bohne, A. Trautmann, T. Pirk, W. Jaegermann, Strukturierung von Siliziumsubstraten für integrierte 3D-Dünnschichtbatterien, MikroSystemTechnik - KONGRESS (2011).
2007
S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, Process Temperature Dependent Mechanical Properties of Polysilicon Measured Using a Novel Tensile Test Structure, IEEE Journal of Microelectromechanical Systems 16 Issue 2, (2007), 202 – 212. B. Levey, P. Gieschke, M. Dölle, S. Spinner, A. Trautmann, P. Ruther, O. Paul, CMOS-Integrat
2004
S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, Annealing Temperature Dependent Strength of Polysilicon Measured Using a Novel Tensile Test Structure, Proc. MEMS’04, Maastricht, (2004), 185-188. M.Schuster, N.Klein, P.Ruther, A.Trautmann, O.Paul, P.Kuzel, F.Kadlec, An interconnected 2D-TM EBG structure for millimetre and sub-millim
Patente/Patentanmeldungen
P1: MICROMECHANICAL METHOD AND CORRESPONDING ASSEMBLY FOR BONDING SEMICONDUCTOR SUBSTRATES AND CORRESPONDINGLY BONDED SEMICONDUCTOR CHIP P2: CONTACT ARRANGEMENT FOR ESTABLISHING A SPACED, ELECTRICALLY CONDUCTING CONNECTION BETWEEN MICROSTRUCTURED COMPONENTS P3: COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES