Publikationen

A.Trautmann, P.Ruther, O.Paul, “Novel Microneedle Arrays Using Suspended Etch Masks“, Proc. Eurosensors XVI, Praque,(2002), 433-436.

A.Trautmann, P.Ruther, O.Paul, “Microneedle Arrays Fabricated Using Suspended Etch Mask Technology Combined with Fluidic Through Wafer Vias”, Proc. MEMS’03, Kyoto, (2003), 682-685.

A.Trautmann, R.Haug, P.Ruther, O.Paul, “Robustness of Silicon Microneedle Arrays Penetrating Bulk Material”, Proc. Eurosensors XVII, (2003), 414-417.

S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, “Annealing Temperature Dependent Strength of Polysilicon Measured Using a Novel Tensile Test Structure”, Proc. MEMS’04, Maastricht, (2004), 185-188

M.Schuster, N.Klein, P.Ruther, A.Trautmann, O.Paul, P.Kuzel, F.Kadlec, “An interconnected 2D-TM EBG structure for millimetre and sub-millimetre waves”, Tech. Dig. Photonics and Electromagn. Crystal Structures V, Kyoto, (2004), 49 ff..

A.Trautmann, P.Ruther, W.Baumann, M.Lehmann, O.Paul, “Fabrication of Out-Of-Plane Electrodes for Intracellular Potential Measurements on Living Adherent Cells”, SIMEA-Meeting’04, Reutlingen, (2004), 79ff..

A.Trautmann, P.Ruther, W.Baumann, M.Lehmann, O.Paul, “Three-Dimensional Nanoelectrodes for Biomedical Investigations on Living Cell Networks”, Proc. Eurosensors XVIII, Rome, (2004), 140-141.

M.Schuster, N.Klein, P.Ruther, A.Trautmann, O.Paul, P.Kuzel, F.Kadlec, “An interconnected 2D-TM EBG structure for millimetre and sub-millimetre waves”, IEEE Journal on Selected Areas in Communication, (2005), Vol.23, No.7, 1378-1384.

P.Ruther, J.Bartholomeyczik, A.Buhmann, A. Trautmann, K.Steffen, O.Paul,  “Microelectromechanical HF Resonators Fabricated Using a Novel SOI-Based Low Temperature Process”, IEEE Sensors Journal, (2005), Vol.5, No.5, 1112-1119.

A.Trautmann, F.Heuck, C.Müller, P.Ruther, O.Paul, “Replication of Microneedle Arrays using Vacuum Casting and Hot Embossing”, Proc. Papers Transducers’05, Seoul, (2005), 1420-1423.

P.Ruther, J.Bartholomeyczik, W.Dominicus, O.Paul, R.Roth, K.Seitz, W.Strauss, A.Trautmann, M.Wandt, “Three-Axial Silicon Force Sensor for Dimensional Metrology of Micro Components”, IEEE Sensors’05, Irvine, (2005).

P.Ruther, J.Bartholomeyczik, W.Dominicus, O.Paul, R.Roth, K.Seitz, W.Strauss, A.Trautmann, M.Wandt, “Three-Axial Silicon Force Sensor for Dimensional Metrology of Micro Components”, MST-Kongress, Freiburg, (2005), 77-80.

A.Trautmann, F.Heuck, C.Müller, P.Ruther, O.Paul, “Microneedle Arrays Replicated using Vacuum Casting and Hot Embossing”, MST-Kongress, Freiburg, (2005), 73-76.  

A.Trautmann, R.Denfeld, F.Heuck, P.Ruther, O.Paul, “Novel Silicon Microneedle Stamps for Allergy Skin Prick Testing”, Proc. MEMS’06, Istanbul, (2006), 434-437.

A Schneider, H Rank, A Trautmann “Eutectic wafer bonding for 3-D integration”, IEEE Electronic System-Integration Technology Conference, (2010), 1-6.

L Bohne, A Trautmann, T Pirk, W Jaegermann „Strukturierung von Siliziumsubstraten für integrierte 3D-Dünnschichtbatterien“, MikroSystemTechnik - KONGRESS 2011.

L Frey, AJ Bauer, M Grieb, A Trautmann, C. Banzhaf „Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures”, Materials Science Forum, (2013) Vol. 740-742, 691-694.

C. T. Banzhaf, M. Grieb, A. Trautmann, A. J. Bauer, L. Frey, "Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures", Materials Science Forum, (2014) Vol. 778-780, 595-598.

C. T. Banzhaf, M. Grieb, A. Trautmann, A. J. Bauer, L. Frey, "Investigation of Trenched and High Temperature Annealed 4H-SiC", Materials Science Forum, (2014), Vol. 778-780, 742- 745.

S.Kamiya, J.Kuypers, A.Trautmann, P.Ruther, O.Paul, “Process Temperature Dependent Mechanical Properties of Polysilicon Measured Using a Novel Tensile Test Structure”, IEEE Journal of Microelectromechanical Systems, (2007), Vol. 16, Issue 2, 202 – 212.

B. Levey, P. Gieschke, M. Dölle, S. Spinner, A. Trautmann, P. Ruther, O. Paul, „CMOS-Integrated Silicon 3D Force Sensor System for Micro Component Coordinate Measurement Machines”, Proc. MEMS’07, Kobe, (2007), 611 – 614.

U. Bartsch, A. Trautmann, P. Ruther, J. Gaspar, O. Paul, “Electromechanical Transducers for Micro Energy Harvesting Based on SOI-Technology”, P. Papers Transducers’07, Lyon, (2007), 141 - 144.

P. Ruther, B. Lapatki, A. Trautmann, O. Paul, „Micro Needle Based Electrode Arrays for Surface Electromyography”, MikroSystemTechnik - KONGRESS 2007.

P. Gieschke, B. Levey, M. Dölle, A. Trautmann, P. Ruther, O. Paul, “Tactile CMOS-Integrated 3D Force Sensor System”, MikroSystemTechnik - KONGRESS 2007.
 

Patente/Patentanmeldungen

P1: MICROMECHANICAL METHOD AND CORRESPONDING ASSEMBLY FOR BONDING SEMICONDUCTOR SUBSTRATES AND CORRESPONDINGLY BONDED SEMICONDUCTOR CHIP

P2: CONTACT ARRANGEMENT FOR ESTABLISHING A SPACED, ELECTRICALLY CONDUCTING CONNECTION BETWEEN MICROSTRUCTURED COMPONENTS

P3: COMPOSITE OF AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND A PRODUCTION METHOD

P4: ARRANGEMENT OF TWO SUBSTRATES HAVING AN SLID BOND AND METHOD FOR PRODUCING SUCH AN ARRANGEMENT

P5: PIEZORESISTIVE MICROMECHANICAL SENSOR COMPONENT AND CORRESPONDING MEASURING METHOD

P6: COMPONENT HAVING A VIA, AND A METHOD FOR MANUFACTURING SUCH A COMPONENT

P7: COMPOSITE COMPRISING AT LEAST TWO SEMICONDUCTOR SUBSTRATES AND PRODUCTION METHOD

P8: ARRANGEMENT OF AT LEAST TWO WAFERS WITH A BONDING CONNECTION AND METHOD FOR PRODUCING SUCH AN ARRANGEMENT

P9: METHOD FOR MANUFACTURING CONDUCTIVE VIAS IN E.G. SEMICONDUCTOR COMPONENT, INVOLVES DEPOSITING PROTECTIVE LAYER ON PORTION OF INSULATION LAYER, AND PARTIALLY FIXING FUNCTIONAL LAYER AT BOTTOM OF TRENCHES

P10: PIEZORESISTIVE MICROMECHANICAL SENSOR COMPONENT E.G. ACCELERATION SENSOR HAS PIEZORESISTIVE DOPING REGIONS PROVIDED AT TOP FACE AND UNDERSIDE OF BENDING JOISTS WHICH ARE ARRANGED BETWEEN SUBSTRATE AND SEISMIC MASS AT OPPOSED SIDES

P11: METHOD FOR MANUFACTURING THROUGH-CONTACT IN PLATED THROUGH STRUCTURED COMPONENT THAT IS UTILIZED AS E.G. MICRO-ELECTRO MECHANICAL SYSTEM SENSOR ELEMENT, INVOLVES SEPARATING CONDUCTIVE SHEET IN TRENCH VIA PHYSICAL VAPOR DEPOSITION OF FILM

P12: SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE CONTACT

P13: MOS FIELD-EFFECT TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF

P14: METHOD FOR STRUCTURING SILICON CARBIDE FOR E.G. SILICON CARBIDE-TRENCH-MOSFET, INVOLVES REPERFORMING ANISOTROPIC PLASMA ETCHING STEP SUCH THAT PASSIVATION LAYER IS REMOVED FROM TRENCH BOTTOM, AND FORMING ENLARGED TRENCH REGION IN SUBSTRATE

P15: SUBSTRAT UND VERFAHREN ZUR HERSTELLUNG EINES SUBSTRATS, METALL-OXID-HALBLEITER-FELDEFFEKTTRANSISTOR UND VERFAHREN ZUR HERSTELLUNG EINES METALL-OXID-HALBLEITER-FELDEFFEKTTRANSISTORS, MIKROELEKTROMECHANISCHES SYSTEM UND KRAFTFAHRZEUG SUBSTRATE AND METHOD FOR PRODUCING A SUBSTRATE, MOSFET AND METHOD FOR PRODUCING A METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS, AND MICRO ELECTRO MECHANICAL SYSTEM VEHICLE

P16: METHOD FOR PRODUCING A SUBSTRATE, SUBSTRATE, METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH A SUBSTRATE, MICRO-ELECTROMECHANICAL SYSTEM WITH A SUBSTRATE, AND MOTOR VEHICLE

P17: METHOD FOR PRODUCING A SUBSTRATE, SUBSTRATE, METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH A SUBSTRATE, AND MICROELECTROMECHANICAL SYSTEM WITH A SUBSTRATE

P18: METHOD FOR PRODUCING A DIELECTRIC MAGNETO RESISTOR IN A SUBSTRATE TRENCH, A CORRESPONDING SUBSTRATE, AND A POWER TRANSISTOR

P19: PARTIKELSENSOR UND VERFAHREN ZUM HERSTELLEN EINES PARTIKELSENSORS PARTICLE SENSOR FOR DETECTION OF ELECTRICALLY CONDUCTIVE PARTICLES, HAS BASE BODY WITH HEATING STRUCTURE FOR HEATING ONE ELECTRODE AND ONE ELECTRODE STRUCTURE

P20: PARTICLE SENSOR AND METHOD FOR MANUFACTURING A PARTICLE SENSOR

P21: MICROMECHANICAL STRUCTURE AND CORESPONDING  MANUFACTURING METHOD